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3R3M4V6 MAX6860 S0720920 HC1G86 C1500 0805B10 7662ER HC1G86
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  smd type transistors sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1 base 2 collector 3 emitter 4 collector FZTA42 features suitable for video output stages in tv sets and switch mode power supplies high breakdown voltage absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 300 v emitter-base voltage v ebo 5v base current i b 100 ma continuous collector current i c 500 ma power dissipation at t amb =25 p tot 2w operating and storage temperature range t j :t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =100a, i e =0 300 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0* 300 v emitter-base breakdown voltage v (br)ebo i e =100a, i c =0 5 v collector cut-off current i cbo v cb =200v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a collector-emitter saturation voltage v ce(sat) i c =20ma, i b =2ma 0.5 v base-emitter saturation voltage v be(sat) i c =20ma, i b =2ma 0.9 v i c =1ma, v ce =10v* 25 i c =10ma, v ce =10v* 40 i c =30ma, v ce =10v* 40 transition frequency f t i c =10ma, v ce =20v,f=20mhz 50 mhz output capacitance c obo v cb =20v, f=1mhz 6 pf * measured under pulsed conditions. pulse width=300s. duty cycle 2% h fe static forward current transfer ratio smd type transistors smd type transistors smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123


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